GFD2206 n-channel enhancement-mode mosfet v ds 60v r ds(on) 22 m ? i d 42a features ?advanced trench process technology ?high density cell design for ultra low on-resistance ?rugged-avalanche energy rated ?fast switching for high efficiency mechanical data case: jedec to-252 molded plastic body terminals: solder plated, solderable per mil-std-750, method 2026 high temperature soldering guaranteed: 250?/10 seconds at terminals weight: 0.011oz., 0.4g 0.190 (4.826) 0.243 (6.172) 0.063 (1.6) 0.165 (4.191) 0.100 (2.54) 0.118 (3.0) 0.245 (6.22) 0.235 (5.97) 0.040 (1.02) 0.025 (0.64) 0.410 (10.41) 0.380 (9.65) 0.170 (4.32) min. 0.214 (5.44) 0.206 (5.23) 0.265 (6.73) 0.255 (6.48) 0.023 (0.58) 0.018 (0.46) 0.094 (2.39) 0.087 (2.21) 0.204 (5.18) 0.156 (3.96) 0.197 (5.00) 0.177 (4.49) 0.035 (0.89) 0.028 (0.71) gs d 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) 0.009 (0.23) 0.001 (0.03) 0.020 (0.51) min. 0.060 (1.52) 0.045 (1.14) 0.050 (1.27) 0.035 (0.89) to-252 (dpak) dimensions in inches and (millimeters) mounting pad layout g d s t rench g en f et new product maximum ratings and thermal characteristics (t c = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current t c = 25 c i d 42 v gs =10v t c = 100 c26 a pulsed drain current (1) i dm 100 maximum power dissipation t c = 25 cp d 62.5 w single pulse avalanche energy (2) e as 210 mj avalanche current (1) i ar 21 a repetitive avalanche energy (1) e ar 11 mj operating junction and storage temperature range t j , t stg 55 to 150 c junction-to-case thermal resistance r jc 2 c/w junction-to-ambient thermal resistance (3) r ja 40 notes: (1) repetitive rating; pulse width limited by max. junction temperature (2) v dd = 30v, starting t j = 25 c, l = 470 h, r g = 25 ? , i as = 21a (3) mounted on 1in 2 , 2oz. cu pad on pcb 7/17/01
GFD2206 n-channel enhancement-mode mosfet electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0v, i d = 250 a60 v drain-source on-state resistance (1) r ds(on) v gs = 10v, i d = 21a 15 22 m ? v gs = 6v, i d = 20a 19 25 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v forward transconductance (1) g fs v ds = 25v, i d = 21a 50 s drain-source leakage current i dss v ds = 48v, v gs = 0v 1 a gate-source leakage i gss v gs = 20v, v ds = 0v 100 na dynamic total gate charge (1) q g v ds = 48v, i d = 21a,v gs =5v 36 50 65 80 nc gate-source charge (1) q gs v ds = 48v, v gs = 10v 15 gate-drain ( miller ) charge (1) q gd i d = 21a 17 turn-on delay time (1) t d(on) 20 35 rise time (1) t r v dd = 30v 107 160 turn-off delay time (1) t d(off) i d = 21a, r g = 12 ? 92 120 ns fall time (1) t f r d = 1.4 ? , v gen = 10v 56 90 input capacitance c iss v gs = 0v 3425 output capacitance c oss v ds = 25v 320 pf reverse transfer capacitance c rss f = 1.0mh z 162 source-drain diode continuous source current i s 42 a pulsed source current i sm 100 diode forward voltage (1) v sd i s = 21a, v gs = 0v 0.93 1.3 v source-drain reverse recovery time (1) t rr i f = 21a, di/dt = 100a/ s 53 ns source-drain reverse recovery charge (1) q rr 92 nc notes: (1) pulse width 300 s; duty cycle 2% g d s v in v dd v gen r g r d v out dut input, v in t d(on) output, v out t on t r t d(off) t off t f inverted 90% 10% 10% 90 % 50% 50% 10% 90% pulse width switching test circuit switching waveforms
0 20 40 60 100 02 4 6 810 fig. 1 ?output characteristics 0 0.02 0.03 0.04 0.01 0 20 40 60 80 100 fig. 3 ?on-resistance vs. drain current 0 20 40 80 60 100 1234567 fig. 2 ?transfer characteristics 80 v gs = 10v 0.8 0.6 0.4 1.8 1.4 1.6 1.2 1 fig. 6 ?on-resistance vs. junction temperature v gs = 10v 6.0v i d -- drain source current (a) v ds -- drain-to-source voltage (v) r ds(on) -- on-resistance ( ? ) i d -- drain current (a) i d -- drain current (a) v gs -- gate-to-source voltage (v) r ds(on) -- on-resistance (normalized) t j -- junction temperature ( c) -- 50 -- 25 25 50 75 100 125 150 0 v gs = 10v i d = 21a 7.0v 5.0v 4.5v 4.0v v ds = 10v 25 c t j = 125 c -- 55 c 0 1000 2000 3000 4000 5000 05 15 20 25 30 10 c -- capacitance (pf) v ds drain-to-source voltage (v) fig. 4 ?capacitance f = 1 mhz v gs = 0v c iss c oss c rss 0 2 4 6 8 10 01020 40 30 fig. 5 ?gate charge 50 60 70 v ds = 48v i d = 21a q g -- gate charge (nc) v gs -- gate-to-source voltage (v) v gs = 6v ratings and characteristic curves (t a = 25 c unless otherwise noted) GFD2206 n-channel enhancement-mode mosfet
0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 fig. 7 source-drain diode forward voltage i s -- source current (a) v sd -- source-to-drain voltage (v) 45 7 9 6810 v gs -- gate-to-source voltage (v) 0 0.01 0.02 0.04 0.03 r ds(on) -- on-resistance ( ? ) fig. 9 threshold voltage vs. temperature i d = --250 a v gs(th) -- gate-to-source threshold voltage (normalized) t j -- junction temperature ( c) -- 50 -- 25 25 50 75 100 125 150 0 0.5 0.75 1.0 1.25 t j = 125 c v gs = 0v 25 c --55 c fig. 8 on-resistance vs. gate-to-source voltage t j = 125 c 25 c i d = 21a 0.001 0.0001 0.01 0 200 400 600 800 1000 0.1 1 10 fig. 10 power vs. pulse duration power (w) pulse duration (sec.) single pulse r jc = 2.0 c/w t c = 25 c fig. 11 maximum safe operating area i d -- drain current (a) --v ds -- drain-source voltage (v) 0.1 1 1 10 100 1000 10 100 v gs = 10v single pulse r ja = 2.0 c/w t c = 25 c r ds(on) limit 100 s 1ms 10ms dc 100ms 0.0001 0.001 0.01 0.01 0.1 0.1 1 1 10 r ja (norm) -- normalized thermal impedance pulse duration (sec.) single pulse d = 0.5 0.2 0.1 0.05 t 1 t 2 p dm 1. duty cycle, d = t 1 /t 2 2. r jc (t) = r jc(norm) *r jc 3. r jc = 2.0 c/w 4. t j - t c = p dm * r jc (t) fig. 12 thermal impedance ratings and characteristic curves (t a = 25 c unless otherwise noted) GFD2206 n-channel enhancement-mode mosfet
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